深圳市世微半导体有限公司
进入金铺AP50N10 场效应MOS管 TO252 100V 50A N道沟MOS管
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Product Summary
BVDSS
RDSON
ID
100V
18 mΩ
50A
Description
TO252 Pin Configuration
The AP50N10 is the highest performance trench N-
ch MOSFETs with extreme high cell density,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The AP50N10 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
上一篇： AP5125 外置MOS管平均电流型LED降压恒流驱动IC 芯片
下一篇： DC-DC汽车灯方案 支持PWM/线性调光 AP5103宽电压 LED降压型恒流芯片
返回列表
咨询热线：
18923706103
地址：宝源路名优工业产品展示采购中心B座1区326
电话： 0755-29977358
电脑版 ©2026 深圳市华务网络有限公司 版权所有