AP50N03 大功率MOS TO252 N道沟场效应MOS管 MOS价格

Super Low Gate Charge

 100% EAS Guaranteed

 Green Device Available

 Excellent CdV/dt effect decline

 Advanced high cell density

 TrenchtechnologyProduct SummaryBVDSSRDSONID30V7.6mΩ50ADescriptionThe AP50N03 is the high cell density trenchedN-ch MOSFETs, which provide excellent RDSONand gate charge for most of the synchronous buckconverter applications.The meet the RoHS and GreenProduct requirement, 100% EAS guaranteed withfull function reliability approved.