AP50N06 N沟道 60V (D-S) MOSFET

GENERAL DESCRIPTION

The AP50N06 is the N-Channel logic enhancement mode power

field effect transistors are produced using high cell density DMOS

trench technology. This high density process is especially tailored to

minimize on-state resistance. These devices are particularly suited

for low voltage application such as LCD inverter, computer power

management and DC to DC converter circuits which need low in-line

power loss.

FEATURES

● RDS(ON)≦ m?@VGS=10V

● Super high density cell design for extremely low RDS(ON)

● Exceptional on-resistance and maximum DC current

capability

APPLICATIONS

● Power Management

● DC/DC Converter

● LCD TV & Monitor Display inverter

● CCFL inverter

● Secondary Synchronous Rectification

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