深圳市世微半导体有限公司
进入金铺AP30N06 NMOS TO252 N沟道场效应管 60V耐压MOS 车灯MOS
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
The
is the high cell density trenched
N
-ch MOSFETs, which provide excellent RDSON
and gate charge for most of the
synchronous buck
converter applications.
The
meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved
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